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Class 12 Chemistry Chapter 1 Model Paper MCQ & सॉलिड स्टेट मॉडल पेपर MCQ

Class 12 Chemistry Chapter 1 Model Paper MCQ & सॉलिड स्टेट मॉडल पेपर MCQ कक्षा 12 रसायन विज्ञान अध्याय 1 अंग्रेजी में सॉलिड स्टेट मॉडल पेपर MCQ

Class 12 Chemistry Chapter 1 Model Paper MCQ & सॉलिड स्टेट मॉडल पेपर MCQ 

कक्षा 12 रसायन विज्ञान अध्याय 1 अंग्रेजी में सॉलिड स्टेट मॉडल पेपर MCQ

 
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Class 12 Chemistry  Model Paper MCQ
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UP Board Solutions for Class 12 Chemistry Chapter 1 Solid State Model Paper MCQ in English

यदि आप 12 वीं कक्षा में पढ़ रहे हैं और अपने स्कूली जीवन की अंतिम परीक्षा की तैयारी कर रहे हैं, तो आप सभी को शुभकामनाएँ। आपको इसकी बुरी तरह आवश्यकता होगी। आखिरकार, यह परीक्षा आपके जीवन में निर्धारण कारक की भूमिका निभाने वाली है। एक तरफ, यह परीक्षा आपके लिए पढ़ाई की सही स्ट्रीम चुनने में आसान बनाएगी जो आपके लिए एकदम सही होगी।

1. Which of the following conditions are favorable for the existence of a solid state of a substance?

Low heat

  • (i) High heat
  • (ii) Low heat
  • (iii) High thermal energy
  • (iv) Weak cohesive force

Low heat

2. Which of the following is not a characteristic of a crystalline solid?

(ii) isotopic nature

  • (i) definite and characteristic heat of fusion
  • (ii) isotopic nature
  • (iii) a regular and iterative pattern of arrangement of constituent particles throughout the crystal
  • (iv) a real solid

(ii) isotopic nature

3. Which of the following is an amorphous solid?

(ii) Quartz glass (SiO₂)

  • (i) Graphite (C)
  • (ii) Quartz glass (SiO₂)
  • (iii) Chrome alum
  • (iv) Silicon carbide (SiC)

(ii) Quartz glass (SiO₂)

4. Which of the following arrangements shows the systematic alignment of the magnetic moment of an diamagnetic material

(iv)


  • 4. Which of the following arrangements shows the systematic alignment of the magnetic moment of an diamagnetic material

(iv)

5. Which of the following is true regarding the value of refractive index of quartz glass?

(i) is same in all directions

  • (i) is same in all directions.
  • (ii) varies in different directions.
  • (iii) cannot be measured.
  • (iv) is always zero

(i) is same in all directions

6. Which of the following statements about amorphous solids is not correct. 

(iv) They are unidirectional in nature.

  • (i) They can become crystalline on heating at any given temperature.
  • (ii) They can become crystalline if kept for a long time.
  • (iii) Amorphous solids can be molded by heating.
  • (iv) They are unidirectional in nature.

(iv) They are unidirectional in nature

7. The reason for the fixed melting point of crystalline solids is __________.

(ii) The regular arrangement of the constituent particles in the crystalline lattice to be observed over a long range.

  • (i) Regular arrangement of constituent particles observed in crystalline lattice over short range.
  • (ii) The regular arrangement of the constituent particles in the crystalline lattice to be observed over a long range.
  • (iii) Same arrangement of constituent particles in different directions.
  • (iv) Different arrangement of constituent particles in different directions

(ii) The regular arrangement of the constituent particles in the crystalline lattice to be observed over a long range

8. In the crystal lattice, the iodine molecules are held together by __________.

(i) London force

  • (i) London force
  • (ii) Bipolar-bipolar interaction
  • (iii) Covalent bond
  • (iv) Coulomb force

(i) London force

9. Which of the following network is solid?

(iii) Diamond

  • (i) SO₂ (solid)
  • (ii) I₂
  • (iii) Diamond
  • (iv) H₂O (ice)

(iii) Diamond

10. Which of the following solid is not a conductor of electricity.

(iii) (C) and (D)

  • (A) Mg (s) (B) TiO (s) (C) I₂ (s) (D) H₂ O (s)
  • (i) only (A)
  • (ii) only (B)
  • (iii) (C) and (D)
  • (iv) (B), (C) and (D)

(iii) (C) and (D)

11. Which of the following is not a characteristic of ionic solids.

(i) very low value of electrical conductivity in molten state

  • (i) very low value of electrical conductivity in molten state
  • (ii) brittle nature
  • (iii) very strong force in interaction
  • (iv) unidirectional nature

(i) very low value of electrical conductivity in molten state

12. Graphite is a good conductor of electricity due to the presence of __________.

(ii) Free valence electron

  • (i) Single electron pair 
  • (ii) Free valence electron 
  • (iii) Cation
  • (iv) Anion

(ii) Free valence electron

13. Which of the following oxides is a good conductor or an insulator depends on temperature

(iii) TiO₃

  • (i) TiO
  • (ii) SiO₂
  • (iii) TiO₃
  • (iv) MgO

(iii) TiO₃

14. Which of the following oxides exhibits similar electrical properties to metals.

(iv) CrO₂

  • (i) SiO₂
  • (ii) MgO
  • (iii) SO₂ (s)
  • (iv) CrO₂

(iv) CrO₂

15. The lattice site in a pure crystal cannot be dominated by __________.

(iii) Electron

  • (i) Molecule
  • (ii) Ion
  • (iii) Electron
  • (iv) Atom

(iii) Electron

16. Graphite cannot be classified as

(iv) ionic solid

  • (i) conducting solid
  • (ii) lattice solid
  • (iii) covalent solid
  • (iv) ionic solid

(iv) ionic solid

17. In __________, cations are present in the interstitial space. 

(i) Frenkel defect

  • (i) Frenkel defect
  • (ii) Schottky defect
  • (iii) Vacancy defect
  • (iv) Metal reduction defect

(i) Frenkel defect

18. Schottky defect is observed in crystals when __________.

(ii) Equal number of cations and anions are absent from the lattice

  • (i) Some cations leave their lattice places and settle in the interstitial places.
  • (ii) Equal number of cations and anions are absent from the lattice.
  • (iii) The total lattice sites are occupied by electrons.
  • (iv) An impurity is present in the lattice

(ii) Equal number of cations and anions are absent from the lattice

19. Which of the following is true about the charge acquired by a p-type semiconductor?

(ii) neutral

  • (i) positive
  • (ii) neutral
  • (iii) negative
  • (iv) p depends on the concentration of the impurity.

(ii) neutral

20. In order to obtain n-type semiconductor from silicon, which valency material should be doped in it?

(iv) 5

  • (i) 2
  • (ii) 1
  • (iii) 3
  • (iv) 5

(iv) 5

21. The total number of tetrahedral vacancies in a face centered unit cell is __________.

(ii) 8

  • (i) 6
  • (ii) 8
  • (iii) 10
  • (iv) 12

(ii) 8

22. Which of the following point defects are exhibited by AgBr(s) crystals.

(i) (A) and (B)

  • (A) Schottky defect (B) Frenkel defect
  • (C) Metal excess defect (D) Metal deficiency defect
  • (i) (A) and (B)
  • (ii) (C) and (D)
  • (iii) (A) and (C)
  • (iv) (B) and (D)

(i) (A) and (B)

23. Which pair has maximum packing capacity?

(ii) hcp and ccp

  • (i) hcp and bcc
  • (ii) hcp and ccp
  • (iii) bcc and ccp
  • (iv) bcc and ljy simple cubic cell

(ii) hcp and ccp

24. The percentage of empty space in an intercentered cubic system is __________.

(iii) 32

  • (i) 74
  • (ii) 68
  • (iii) 32
  • (iv) 26

(iii) 32

25. Which one of the following statements is false for hexagonal close packing.

(iv) In this type of arrangement, the spheres of the fourth layer are perfectly aligned with the spheres of the first layer

  • (i) Coordination number is 12.
  • (ii) It has 74% packaging efficiency.
  • (iii) The tetrahedral vacuoles of the second layer are covered by the spheres of the third layer.
  • (iv) In this type of arrangement, the spheres of the fourth layer are perfectly aligned with the spheres of the first layer

(iv) In this type of arrangement, the spheres of the fourth layer are perfectly aligned with the spheres of the first layer


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